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| MICROWAVE CORPORATION v00.0703 HMC462 Features Noise Figure: 2 dB @ 10 GHz Gain: 15 dB P1dB Output Power: +15 dBm @ 10 GHz Self-Biased: +5.0V @ 63 mA 50 Ohm Matched Input/Output 3.12 mm x 1.38 mm x 0.1 mm GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC462 Wideband LNA is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation * Fiber Optics Functional Diagram General Description The HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at 0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications. The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 C, Vdd= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V) 12.5 13.5 Min. Typ. 2.0 - 6.0 15.5 0.5 0.015 3.0 15 12 15.5 18 26.5 63 11 0.025 4.0 13 Max. Min. Typ. 6.0 - 18.0 15 0.5 0.015 2.5 20 13 14 16 25.5 63 9.5 0.025 3.5 12 Max. Min. Typ. 18.0 - 20.0 14 0.5 0.015 3.0 14 8 12.5 15.5 24 63 0.025 3.7 Max. Units GHz dB dB dB/ C dB dB dB dBm dBm dBm mA 1 - 76 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0703 MICROWAVE CORPORATION HMC462 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature 20 18 16 1 AMPLIFIERS - CHIP 1 - 77 14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Input Return Loss vs. Temperature 0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) +25C +85C -40C -5 -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0703 MICROWAVE CORPORATION HMC462 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz 1 AMPLIFIERS - CHIP GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0 2 4 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 0 2 4 6 8 10 17 - 25 GHz +25C +85C -55C P1dB (dBm) +25C +85C -40C 6 8 10 12 14 16 18 20 22 Psat (dBm) 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 0 2 4 6 Gain, Power, Noise Figure & Supply Current vs. Supply Voltage @ 10 GHz GAIN (dB), P1dB (dBm), NOISE FIGURE (dB) 20 18 16 14 12 10 8 6 4 2 0 4.5 5 5.5 6 6.5 7 7.5 8 Gain P1dB Noise Figure 74 72 70 68 66 Idd (mA) 64 62 60 Idd OIP3 (dBm) +25C +85C -40C 58 56 54 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Vdd SUPPLY VOLTAGE (Vdc) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 50 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +9.0 Vdc +23 dBm 175 C 4.5 W Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 +7.0 Idd (mA) 62 63 64 65 66 67 20 C/W -65 to +150 C -55 to +85 C +7.5 +8.0 1 - 78 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0703 MICROWAVE CORPORATION HMC462 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz Outline Drawing 1 AMPLIFIERS - CHIP NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz Interface Schematic 2 Vdd Power supply voltage for the amplifier. External bypass capacitors are required 3 RFOUT This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 79 v00.0703 MICROWAVE CORPORATION HMC462 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz 1 AMPLIFIERS - CHIP Assembly Diagram 1 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0703 MICROWAVE CORPORATION HMC462 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-tosubstrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 1 AMPLIFIERS - CHIP 1 - 81 Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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